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在低温强磁场条件下,对In0.53Ga0.47As/In0.52Al0.48As量子阱中的二维电子气进行了磁输运测试.在低磁场范围内观察到正磁电阻效应,在高磁场下这一正磁电阻趋于饱和,分析表明这一现象与二维电子气中的电子占据两个子带有关.在考虑了两个子带之间的散射效应后,通过分析低磁场下的正磁电阻,得到了每个子带电子的迁移率,结果表明第二子带电子的迁移率高于第一子带电子的迁移率.进一步分析表明,这主要是由两个子带之间的散射引起的.
The magnetic transport of two-dimensional electron gas in the In0.53Ga0.47As / In0.52Al0.48As quantum well was tested at low temperature and high magnetic field, and the positive magnetoresistance effect was observed in the low magnetic field. Under high magnetic field The positive magnetoresistance tends to be saturated, and the analysis shows that this phenomenon is related to the occupation of two subbands by electrons in two-dimensional electron gas.After considering the scattering effect between two subbands, by analyzing the positive magnetic resistance The results show that the mobility of the second sub-band electron is higher than that of the first sub-band electron.A further analysis shows that this is mainly caused by the scattering between the two sub-bands.