Conductivity modulation enhanced lateral IGBT with SiO_2 shielded layer anode by SIMOX technology on

• 作 者: 陈文锁 张波 李肇基 方健 关旭
• 机 构: State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic scienc
• 出 处: 半导体学报
• 发表日期: 2010年06期
• 关键词: anode transistor breakdown bipolar insulated drift conducting switching compatib

A new lateral insulated-gate bipolar transistor(LIGBT) with a SiO_2 shielded layer anode on SOI substrate is proposed and discussed.Compared to the conventional LIGBT,the proposed device offers an enhanced conductivity modulation effect due to the SiO_2 shielded layer anode structure which can be formed by SIMOX technology.Simulation results show that,for the proposed LIGBT,during the conducting state,the electron-hole plasma concentrations in the n-drift region are several times larger than those of the conventional LIGBT;the conducting current is up to 37% larger than that of the conventional one.The enhanced conductivity modulation effect by SiO_2 shielded layer anode does not sacrifice other characteristics of the device,such as breakdown and switching,but is compatible with other optimized technologies.

A new lateral insulated-gate bipolar transistor (LIGBT) with a SiO 2 shielded layer anode on SOI substrate is proposed and discussed. Compounded to the conventional LIGBT, the proposed device offers an enhanced conductivity modulation effect due to the SiO 2 shielded layer anode structure which can be formed by SIMOX technology. Simulation results show that, for the proposed LIGBT, during the conducting state, the electron-hole plasma concentrations in the n-drift region are several times larger than those of the conventional LIGBT; the conducting current is up to 37% larger than that of the conventional one. The enhanced conductivity modulation effect by SiO_2 shielded layer anode does not sacrifice other characteristics of the device, such as breakdown and switching, but is compatible with other optimized technologies.