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一、概述从六十年代初期至今十余年内,用来生长砷化镓单晶外延膜的方法主要有两种:一种是利用化学反应从汽相往单晶衬底上淀积砷化镓的汽相外延生长法,另一种是从含有砷化镓材料的溶液中利用偏析作用在衬底上析出单晶的液相外延法。最近几年,国外又出现了一种被称为分子束外延的生长技术(也有称为真空淀积技术或真空蒸发技术),并用它成功地生长了砷化镓单晶薄膜。所谓分子束外延方法,就是在一超高真空系统中,使衬底保持在一适当高温下,通过将膜组分元素和掺杂剂元素分别装到分离的喷射炉中,并将炉温加到蒸发温度以产生相应的分子束,连续地打在衬底表面上,从而在衬底表面上进行淀积以后到单晶薄层。
I. Overview From the early 1960s until now more than ten years, the method used to grow GaAs single crystal epitaxial film are mainly two: one is the use of chemical reaction from the vapor phase to single crystal substrate deposition of arsenic Gallium vapor phase epitaxial growth method, and the other is from a solution containing gallium arsenide by segregation of a single crystal precipitation on the substrate by liquid-phase epitaxy. In recent years, abroad, there has been a growth known as molecular beam epitaxy (also known as vacuum deposition or vacuum evaporation technology), and use it successfully grown gallium arsenide single crystal film. The so-called molecular beam epitaxy method, is in an ultra-high vacuum system, the substrate is maintained at an appropriate high temperature, by the film component elements and dopant elements were loaded into a separate injection furnace, and the furnace temperature plus To the evaporation temperature to produce a corresponding molecular beam, striking the surface of the substrate in succession, thereby depositing a thin layer of single crystal on the surface of the substrate.