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提出了新型ＩｎＧａＡｓ／ＧａＡｓ应变脊形量子线结构．这种应变脊形量子线结合了非平面应变外延层中沿不同晶向能带带隙的变化、非平面生长应变层Ｉｎ组分的变化，以及非平面外延层厚度的变化等三方面共同形成的横向量子限制效应的综合作用．在非平面ＧａＡｓ衬底上用分子束外延生长了侧面取向为（１１３）的脊形ＡｌＡｓ／ＩｎＧａＡｓ／ＡｌＡｓ应变量子线．用１０Ｋ光致荧光谱测试了其发光性质．用ＫｒｏｎｉｇＰｅｎｎｅｙ模型近似计算了这种应变脊形结构所具有的横向量子限制效应，发现其光致荧光谱峰位的测试结果，与计算结果相比，有１０ｍｅＶ的“蓝移”．认为这一跃迁能量的“蓝移”是上述三方面横向量子限制效应综合作用的结果
A novel InGaAs / GaAs strain ridge quantum wire structure is proposed. This strain of ridge-shaped quantum wires combined with the change of bandgap in different crystalline orientations in the non-plane strain epitaxial layer, the change of the In composition of the nonplanar growth strain layer, and the change of the thickness of the non-plane epitaxial layer The combined effect of lateral quantum confinement effects. Ridged AlAs / InGaAs / AlAs strain quantum wires with (113) orientation were epitaxially grown by molecular beam epitaxy on a non-planar GaAs substrate. Its luminescence properties were measured by 10K photoluminescence spectroscopy. Using the Kronig-Penney model, the lateral quantum confinement effect of this strain ridge structure was approximated and the results of the peak position of the fluorescence spectrum were found to have a “blue shift” of 10 meV compared with the calculated results. It is considered that the “blue shift” of this transitional energy is the result of the combination of the above three lateral quantum confinement effects