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利用金属有机气相沉积技术生长ＩｎＧａＡｓＰ／ＩｎＰ多量子阱结构，通过改变生长程序，得到了优化的陡峭量子阱界面．并利用光致发光（ＰＬ）和Ｘ射线双晶衍射对其界面质量分析，Ｘ射线双晶衍射表明界面起伏为一个原子层厚度，在１０Ｋ温度下ＰＬ谱半峰高宽（ＦＷＨＭ）为７ｍｅＶ
The InGaAsP / InP multiple quantum well structure was grown by metal-organic vapor deposition technology, and the optimized steep quantum well interface was obtained by changing the growth program. The interfacial quality of the PL was analyzed by PL and X-ray double crystal diffraction. The X-ray double crystal diffraction showed that the interface fluctuation was an atomic layer thickness. The FWHM of the PL spectrum was 7 meV at 10K