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获得高质量稳定的p型ZnO薄膜是实现ZnO基光电器件化的关键。目前,国际上公认Ⅴ族元素中的N替代O位(NO)是实现p型ZnO较理想的掺杂途径。但p-ZnO∶N薄膜的导电性能会随着时间、光照、温度条件发生变化,稳定性不足。大量的理论和实验研究表明N基二元共掺(N-X)可以提高N在ZnO薄膜中的固溶度,浅化N的受主能级,且在很大程度上能够改善p型ZnO的导电性能,有利于获得稳定的p型ZnO薄膜。为此,从N基施主受主共掺、双受主共掺以及其它共掺方面综述了N-X共掺p型ZnO薄膜的研究现状。
Obtaining high quality and stable p-type ZnO thin film is the key to realize ZnO-based photoelectric device. At present, it is generally accepted that the N substitution of O (NO) in the group V element is an ideal doping route for realizing p-type ZnO. However, the conductivity of the p-ZnO: N thin film changes with time, light and temperature, and its stability is not sufficient. Numerous theoretical and experimental studies have shown that N-based binary co-doping (NX) can improve the solid solubility of N in ZnO thin films, lower the acceptor level of N, and largely improve the conductivity of p-type ZnO Performance, help to obtain a stable p-type ZnO film. For this reason, the research status of N-X codoped p-type ZnO thin films is reviewed from the viewpoints of acceptor co-doping, double acceptor co-doping and other co-doping.