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In this work, we investigate the Co-Si reaction, the Co growth mode at room temperature, diffusion behaviour as well as morphology evolution during annealing on both H-terminated and clean Si(001) and Si(111) surfaces. From in-situ X-ray photoelectron spectroscopy (XPS) investigation, "Co-Si" reaction appears to occur on both H-terminated and clean surfaces at room temperature (RT) and the silicide crystallinity is improved upon annealing.Co growth mode on H-terminated Si surfaces occurs in a pseudo layer-by-layer manner while small close-packed island growth mode is observed on the clean Si surface. Upon annealing at different temperatures, Co atom concentration decreases versus annealing time, which in part is attributed to Co atoms inward diffusion. The diffusion behaviour on both types of surfaces demonstrates a similar trend. Morphology study using ex-situ atomic force microscopy (AFM) shows that the islands formed on Si(001) surface after annealing at 700 ℃ are elongated with growth directions alteate between the two perpendicular [(-1)10] and [110] directions. Triangular islands are observed on Si(111) surface.