Investigation of Coulomb scattering on sSi/Si_(0.5)Ge_(0.5)/sSOI quantum-well p-MOSFETs

• 作 者: 文娇 刘强 刘畅 王翼泽 张波 薛忠营 狄增峰 俞文杰 赵清太
• 机 构: School of Materials Science and Engineering, Shanghai University,State Key Laboratory of Functional
• 出 处: Journal of Semiconductors
• 发表日期: 2016年09期
• 关键词: Coulomb phonon Ge charges intensified accumulated strained deviation thick gover

sSi/Si_(0.5)Ge_(0.5)/sSOI quantum-well(QW) p-MOSFETs with Hf O_2/Ti N gate stack were fabricated and characterized. According to the low temperature experimental results, carrier mobility of the strained Si_(0.5)Ge_(0.5)QW p-MOSFET was mainly governed by phonon scattering from 300 to 150 K and Coulomb scattering below150 K, respectively. Coulomb scattering was intensified by the accumulated inversion charges in the Si cap layer of this Si/Si Ge heterostructure, which led to a degradation of carrier mobility in the Si Ge channel, especially at low temperature.

According to the low temperature experimental results, carrier mobility of the strained Si_ (0.5) / sSOI quantum-well (QW) p-MOSFETs with Hf O_2 / ) Ge_ (0.5) QW p-MOSFET was mainly governed by phonon scattering from 300 to 150 K and Coulomb scattering below 150 K, respectively. Coulomb scattering was intensified by the accumulated inversion charges in the Si cap layer of this Si / Si Ge heterostructure, which led to a degradation of carrier mobility in the Si Ge channel, especially at low temperature.