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基于应变Si/SiGe器件结构,本文建立了统一的应变Si NMOSFET电荷模型.该模型采用电荷作为状态变量,解决了电荷守恒问题.同时采用平滑函数,实现了应变Si NMOSFET端口电荷及其电容,从亚阈值区到强反型区以及从线性区到饱和区的平滑性,解决了模型的连续性问题.然后采用模拟硬件描述语言Verilog-A建立了电容模型.通过将模型的仿真结果和实验结果对比分析,验证了所建模型的有效性.该模型可为应变Si集成电路分析、设计提供重要参考.
Based on the structure of strained Si / SiGe devices, a unified charge model of strained Si NMOSFET is established in this paper, which uses the charge as the state variable to solve the problem of charge conservation.At the same time, the charge and capacitance of the strained Si NMOSFET are achieved by using the smoothing function. Sub-threshold region to the strong inversion region and the smoothness from the linear region to the saturation region, which solves the problem of the continuity of the model.Then the capacitance model is established by using the simulation hardware description language Verilog-A.Through the simulation results of the model and the experimental results The comparison and analysis verify the validity of the proposed model, which provides an important reference for the analysis and design of strained Si integrated circuits.