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用交流热激电流(ATSC)方法研究了x=0.195～0.275的窄禁带Hg_(1-x)Cd_xTe半导体中的深能级,讨论了Hg_(1-x)Cd_xTe深能级的物理性质。实验表明交流热激电流方法(ATSC)是研究窄禁带Hg_(1-x)Cd_xTe深能级的一种有效方法。
The deep level in the narrow bandgap Hg_ (1-x) Cd_xTe semiconductor with x = 0.195 ~ 0.275 was studied by the ATSC method. The physical properties of Hg_ (1-x) Cd_xTe deep level were discussed. Experiments show that the exchange heat shock current method (ATSC) is to study the narrow band gap Hg_ (1-x) Cd_xTe deep level of an effective method.