掺过渡金属钴的非晶硅薄膜的ESR和光电特性的研究

• 作 者: 陈光华 张津燕 甘润今 张仿清
• 机 构: 兰州大学物理系,兰州大学物理系,兰州大学物理系,兰州大学物理系 兰州730001,兰州730001,兰州730001,兰州730001
• 出 处: 半导体学报
• 发表日期: 1991年06期
• 关键词: 光学带隙 非晶硅薄膜 ESR 电子束蒸发法 悬挂键 光学特性 自旋态 光电特性 室温电导率 杂质浓度

本文对用电子束蒸发法制备的a-Si:Co薄膜的ESR和光学特性进行了研究.对样品的ESR信号、光学带隙和室温电导率随杂质浓度的变化关系进行了测量.结果表明,Co原子在a-Si:Co薄膜中形成受主中心,并伴随着对悬挂键的补偿;当杂质浓度小于3％时,光学带隙、自旋态密度和峰峰宽度基本不变,当杂质浓度大于3％时,随着Co含量的增加,光学带隙、自旋态密度减小,室温电导率和峰峰宽增大.本文对上述结果进行了分析和讨论.

In this paper, the ESR and optical properties of a-Si: Co thin films prepared by electron beam evaporation have been studied.The ESR signal, optical band gap and room-temperature conductivity of samples have been measured with the change of impurity concentration.The results show that, Co atoms form acceptor centers in the a-Si: Co films with the compensation of dangling bonds. When the impurity concentration is less than 3%, the optical band gap, the spin-state density and the peak- When the concentration is more than 3%, with the increase of Co content, the optical bandgap and the spin-state density decrease, and the room-temperature conductivity and the peak-to-peak width increase.This paper analyzed and discussed the above results.