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2007年1月29日,英特尔公司宣布在基础晶体管设计方面取得了一个最重大的突破,采用两种完全不同以往的晶体管材料来构建45nm晶体管的绝缘“墙”和切换“门”。
January 29, 2007 - Intel Corporation announces one of the most significant breakthroughs in basic transistor design, using two completely different transistor materials to build the “wall” and “gate” isolation of 45nm transistors.