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基于GaAs材料和器件的制造工艺,介绍了纳米膜隧穿器件和微陀螺的结构设计方法和工艺加工方法。阐述了基于纳米膜隧穿效应微陀螺的工作原理,对纳米膜隧穿器件和微陀螺的结构进行了设计,分析了微陀螺的模态频率设计和匹配仿真。采用反应离子刻蚀(RIE)刻蚀和感应耦合等离子体(ICP)刻蚀方法分别对隧穿器件和微陀螺结构进行了加工,利用扫描电镜观测,加工结果较好。利用冲击信号测试了微陀螺的频率响应,讨论了微陀螺的模态频率测试结果和匹配情况,证明微陀螺在驱动方向和检测方向上能够工作且模态频率匹配程度较好。实验结果表明,提出的GaAs材料微陀螺结构设计方法和工艺加工方法是可行的,能够应用于GaAs基微陀螺结构设计与制造。
Based on the GaAs material and device manufacturing process, the structure design method and process method of nanometer film tunneling device and micro-gyroscope are introduced. The working principle of the micro-gyroscope based on the tunneling effect of nano-film was described. The structure of the nano-film tunneling device and the micro-gyro was designed. The modal frequency design and matching simulation of the micro-gyro were analyzed. The structure of the tunneling device and the micro-gyroscope were processed by reactive ion etching (RIE) and inductively coupled plasma (ICP) etching respectively. The results of scanning electron microscopy showed that the processing results were good. The frequency response of the micro-gyro was tested by using the impact signal. The results of the modal frequency test and the matching of the micro-gyro were discussed. The results show that the micro-gyro can work in the driving direction and the detection direction and the modal frequencies match well. The experimental results show that the proposed design method and processing method of micro-gyrostructure of GaAs material is feasible and can be applied to the design and manufacture of GaAs-based micro-gyro structure.