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原位磷注入合成 Ｌ Ｅ Ｃ晶体生长法可分别合成得到富铟、近化学配比或富磷的 Ｉｎ Ｐ熔体， 并进行 Ｌ Ｅ Ｃ晶体生长。我们对不同配比程度的材料进行了 Ｆ Ｔ Ｉ Ｒ、 Ｐ Ｌ、变温 Ｈａｌｌ等测试工作， 得到了一些相当有意义的结果， 对研究非掺杂半绝缘 Ｉｎ Ｐ提供了非常有意义的实验证据
In-Situ Phosphorus Implantation Synthesized L E C crystal growth method can be used to synthesize indium-rich, near-stoichiometric or phosphorus-rich In P melts respectively and grow L E C crystals. We have carried out some testing work such as F T I R, P L, temperature-varying Hall and so on for different matching materials, and obtained some very meaningful results. It provides a very meaningful experiment for the study of undoped semi-insulating In P evidence