Ferromagnetism in Eu-doped ZnO films deposited by radio-frequency magnetic sputtering

• 作 者: 谭永胜 方泽波 陈伟 何丕模
• 机 构: Department of Physics,Zhejiang University,Department of Physics,Shaoxing University,
• 出 处: Chinese Physics B
• 发表日期: 2004年期
• 关键词: sputtering saturation cooled annealing attributed remarkably discontinuous defec

This paper reports that Eu-doped ZnO films were successfully deposited on silicon (100) by radio-frequency magnetic sputtering. The x-ray diffraction patterns indicate that Eu substitutes for Zn in the lattice. Ferromagnetic loops were obtained by using superconducting quantum interference device at 10 K and room temperature. No discontinuous change was found in both of the zero-field-cooled and field-cooled curves. The observed ferromagnetism in Eu-doped ZnO can be attributed to a single magnetic phase. The saturation magnetisation decreased remarkably for the Eu-doped ZnO prepared by introducing 5% of oxygen in the sputtering gas or by the post annealing in O2, suggesting that the defects play key roles in the development of ferromagnetism in Eu-doped ZnO films.

This paper reports that Eu-doped ZnO films were successfully deposited on silicon (100) by radio-frequency magnetic sputtering. The x-ray diffraction patterns that the Eu substitutes for Zn in the lattice. Ferromagnetic loops were obtained by using superconducting quantum interference device at 10 K and room temperature. No discontinuous change was found in both of the zero-field-cooled and field-cooled curves. The observed ferromagnetism in Eu-doped ZnO can be attributed to a single magnetic phase. The saturation magnetisation decreased remarkably for the Eu-doped ZnO prepared by introducing 5% of oxygen in the sputtering gas or by the post annealing in O2, suggesting that the defects play key roles in the development of ferromagnetism in Eu-doped ZnO films.