抛光法U型槽隔离

• 作 者: 胡骏鹏
• 出 处: 微电子学与计算机
• 发表日期: 1988年08期
• 关键词: 反应离子刻蚀 半导体集成电路 徐元森 化学机械 等平面隔离 选择氧化 埋层 图形畸变 刻蚀 槽底

据徐元森等在第五届全国半导体集成电路学术年会上报导,他们所采用的抛光法U型槽隔离是先用反应离子刻蚀出陡直的U型槽,然后向槽底注入硼,经氧化后沉积Si_3N_4,再生长多晶硅填平,最后用化学机械方法抛去多余的多晶硅,这样可以获得平整如初的表面.

According to Xu Yuansen and other scholars at the Fifth National Semiconductor Integrated Circuits Conference reported that they used the polishing method U-groove isolation is the first reactive ion etching a steep U-shaped groove, and then into the bottom of the groove boron, the Oxidation deposited Si_3N_4, and then reclaimed polycrystalline silicon filled, and finally throw away excess polysilicon chemical mechanical methods, so you can get smooth surface.