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本文讨论了用S~+注入掺铬的半绝缘砷化镓衬底以制备N型砷化镓薄层。目的是代替微波低噪声砷化镓肖特基势垒场效应管(SBF-ET)所需的砷化镓薄外延层。注入条件:能量100千电子伏,剂量1.5×10~(13)/厘米~2,退火温度为825℃,退火时间15分钟。已经做出0.2～0.3微米厚的N型薄层,平均载流子浓度为5×10~(16)～1×10~(17)/厘米~3。载流子迁移率在2600～3400厘米~2/伏·秒的范围。薄层厚度和载流子浓度的均匀性是好的。采用双注入即注入S~+之后,再注入P~+可以改善注入层的电特性。利用S~+注入制备的N型砷化镓薄层,已制出肖特基势垒场效应晶体管,其跨导和夹断电压可与气相外延薄层制备的肖特基势垒场效应晶体管相比拟。
This article discusses the use of S ~ + implanted chromium-doped semi-insulating gallium arsenide substrate to prepare N-type gallium arsenide thin layer. The purpose is to replace the GaAs thin-film epitaxial layers required for microwave low-noise GaAs Schottky barrier FETs (SBF-ET). Injection conditions: energy 100 keV, dose 1.5 × 10 ~ (13) / cm ~ 2, annealing temperature 825 ℃, annealing time 15 minutes. An N-type thin layer of 0.2-0.3 μm thickness has been made with an average carrier concentration of 5 × 10-16 (1 × 10-17) / cm -3. The carrier mobility is in the range of 2600 to 3400 cm 2 / V · sec. The uniformity of the thickness of the layer and the carrier concentration is good. After double injection is injected into S ~ +, the injection of P ~ + can improve the electrical properties of the implanted layer. Schottky barrier field effect transistors have been fabricated using S ~ + implanted N-type gallium arsenide thin films. The transconductance and pinch-off voltage can be compared with Schottky barrier field effect transistors Compared with.