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利用Zn扩散形成非吸收窗口技术,制备了大功率红光660 nm半导体激光器。对封装后的器件进行电流电压(I-V)特性测试。由于材料本身串联电阻的影响,半导体激光器的I-V曲线不再符合理想二极管I-V特性方程。通过数据拟合,得到半导体激光器的串联电阻约为0.5Ω。测试中还发现了两种异常I-V曲线,分别源于器件并联电阻及寄生二极管的影响。对每种I-V曲线建立了电路模型,并推导了I-V特性方程。分析认为制作过程中的金属工艺、烧结工艺和Zn扩散工艺等都会影响半导体激光器的电流分布及I-V特性。I-V特性测试可以用于半导体激光器的工艺监控与失效分析等。
The use of Zn diffusion to form non-absorption window technology, prepared a high-power red 660 nm semiconductor laser. The packaged devices were tested for current-voltage (I-V) characteristics. Due to the effect of the series resistance of the material itself, the I-V curve of the semiconductor laser no longer conforms to the I-V characteristic equation of the ideal diode. Through the data fitting, the series resistance of the semiconductor laser is about 0.5Ω. The test also found two abnormal I-V curves, respectively, from the device parallel resistance and parasitic diode. The circuit model is established for each I-V curve and the I-V characteristic equation is derived. The analysis shows that the metal process, the sintering process and the Zn diffusion process in the manufacturing process all affect the current distribution and I-V characteristics of the semiconductor laser. I-V characteristics of the test can be used for semiconductor laser process monitoring and failure analysis.