,Reduction of Electron Leakage in a Deep Ultraviolet Nitride Laser Diode with a Double-Tapered Elect

• 作 者: Yi-Fu Wang Mussaab I.Niass Fang Wang Yu-Huai Liu
• 机 构: National Joint Research Center for Electronic Materials and Systems, Zhengzhou University, Zhengzhou
• 出 处: 中国物理快报（英文版）
• 发表日期: 2019年5期

A double-tapered AlGaN electron blocking layer (EBL) is proposed to apply in a deep ultraviolet semiconductor laser diode.Compared with the inverse double-tapered EBL,the laser with the double-tapered EBL shows a higher slope effciciency,which indicates that effective enhancement in the transportation of electrons and holes is achieved.Particularly,comparisons among the double-tapered EBL,the inverse double-tapered EBL,the singletapered EBL and the inverse single-tapered EBL show that the double-tapered EBL has the best performance in terms of current leakage.