,Single Cell Element of Chalcogenide Random Access Memory Fabricated with the Focused Ion Beam Metho

• 作 者: LIU Bo SONG Zhi-Tang FENG Song-Lin CHEN Bomy
• 机 构: Research Centre of Functional Semiconductor Film Engineering and Technology, State Key Laboratory of
• 出 处: 中国物理快报（英文版）
• 发表日期: 2004年10期

A single cell element of chalcogenide random access memory was fabricated by using the focused ion beam method. The contact size between the Ge2Sb2 Te5 phase change film and the top electrode film is about 600nm (diameter) and the contact area is calculated to be 0.28pm2. The thickness of the phase change film is 83nm.The current-voltage characteristics of the cell element are studied using the home-made current-voltage tester in our laboratory. The minimum threshold current of about 0.6mA is obtained.