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以20钢含V型缺陷平板试样为研究对象,通过试验方法和ANSYS仿真方法对试样在拉伸载荷下的应力分布进行反复加载卸载分析,测量了试样表面规定路径的切向和法向的漏磁场分布;分析了V型缺陷对磁记忆信号的影响以及固定位置的磁场值随应力的变化关系;最后将试验结果与模拟结果进行对比,发现试验结果与模拟结果具有很好的一致性。在应力小于50MPa时磁场值随应力的增加而减小,在应力大于50MPa时磁场值随应力的增加而增加。变化关系表现出了明显的应力磁化反转现象,磁化反转位置在50MPa(约是最大应力的30%)。
In this paper, 20 steel flat specimens with V-shaped defects were taken as research object. The stress distributions of specimens under tensile load were repeatedly loaded and unloaded by the test method and the ANSYS simulation method, and the tangential direction of the prescribed path on the specimen was measured The distribution of leakage magnetic field is analyzed. The influence of V-type defects on the magnetic memory signal and the change of the magnetic field at a fixed position with the stress are analyzed. Finally, the experimental results are compared with the simulation results, and the experimental results are in good agreement with the simulation results Sex. When the stress is less than 50MPa, the magnetic field decreases with the increase of the stress. The magnetic field increases with the increase of the stress when the stress is more than 50MPa. The relationship between changes shows a significant magnetization reversal phenomenon, magnetization reversal position at 50MPa (about 30% of the maximum stress).