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由CO2离化团束辐照Si表面形成的氧化层的厚度与CO2团束大小及团束能量相关，而其成分接近SiO2在低辐照剂量下，氧化层增厚服从反应规律，而在高剂量下服从扩散规律．
The thickness of the oxide layer formed on the surface of Si irradiated by the CO2 ionization cluster is related to the size of the CO2 cluster and the energy of the cluster beam. The composition of the oxide layer is close to that of SiO2. Under low irradiation dose, the oxide layer thickens to obey the reaction law, Under the dose to follow the rules of proliferation.