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硅平面工艺问世以来,芯片中的元件数以每年递增一倍的速度增长着。现在MOS集成电路继续向封装密度高、工作速度快的方向发展,这就要求电路中的MOST(金属氧化物晶体管)尺寸更加微型化。但是采用常规长沟道MOST工艺来制造短沟道MOST会出现一些问题。首先是沟道长度受到工艺精度,例如光刻、腐蚀等精度的限制,沟道长度不易控制。更主要的是会产生“短沟道效应”,即缩短MOST的沟长会引起耐压和阈压下降。短沟道MOST工艺就是要做到,既能缩短MOST的沟长,又能避免或减弱短沟道效应的影响,使得阈压的变化和耐压的下降都很小。本文主要讨论短沟道MOS工艺的基本过程及其特点,介绍目前已达到的短沟道MOS器件的参数。
Since the advent of silicon planar technology, the number of components in the chip has been doubling each year. Now that MOS integrated circuits continue to move toward higher package densities and faster operating speeds, the MOST (Metal Oxide Transistor) size in the circuit needs to be more miniaturized. However, conventional long-channel MOST process to create short-channel MOST will have some problems. The first is that the channel length is limited by the accuracy of the process such as lithography and etching, and the channel length is not easily controlled. More importantly, there will be a “short-channel effect,” which means that shortening the trench length of MOST will cause a decrease in withstand voltage and threshold voltage. Short-channel MOST process is to be done, both to shorten the MOST trench length, but also to avoid or reduce the impact of short-channel effect, making the threshold voltage changes and pressure drop are small. This article mainly discusses the basic process and characteristics of the short-channel MOS process, and introduces the parameters of the short-channel MOS device that has been reached so far.