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本文研究了TEA CO_2激光诱导SF_6与单晶硅和金属钨的表面化学反应。实验结果表明这些反应的反应率与激光频率之间具有明显的依赖关系,在频率为942.2cm~(-1)处反应率呈极大值。对于SF_6-Si体系,反应率与硅的不同晶面有关,在相同条件下Si(100)面与SF_6的反应率大于Si(111)面。对于SF_6-W体系,测定了激光能量密度和脉冲辐照次数与反应率之间的关系,其反应阈值为1Jcm~(-2),并测得该反应的速率与SF_6分压呈一级反应关系。同时,还讨论了上述反应的机理,认为气态振动受激的六氟化硫分子与被激光激活的固相表面之间的相互作用是反应的主要过程。
In this paper, the surface chemical reaction of SF_6 with monocrystalline silicon and tungsten metal was studied by TEA CO_2 laser. The experimental results show that there is a clear dependence between the reaction rate and the laser frequency. The reaction rate reaches the maximum at the frequency of 942.2 cm -1. For SF_6-Si system, the reaction rate is related to the different crystal planes of Si. Under the same conditions, the reaction rate between Si (100) and SF_6 is larger than that of Si (111). For the SF_6-W system, the relationship between the laser energy density and the number of pulsed irradiation and the reaction rate was determined. The reaction threshold was 1Jcm ~ (-2) and the reaction rate was first-order reaction with SF_6 partial pressure relationship. At the same time, the mechanism of the above reaction is also discussed. It is considered that the interaction between gaseous sulfur hexafluoride excited by gaseous vibration and the solid surface activated by laser is the main process of reaction.