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低能离子溅射半导体表面会引起表面结构和成分的变化,导致器件电学性能变差。本文用俄歇电子谱研究了轰击离子能量和束流密度对GaAs、Al_xGa_(1-x)As表面成分的影响。实验分析表明,离子轰击导致GaAs表面As元素严重贫乏和Al_xGa_(1-x)As表面Al元素强烈偏析和Ga元素的轻微减小。我他对离子轰击后GaAs Al_xGa_(1-x)As的表面成分分析结果与文献值不同。实验结果同时说明,GaAs与Al_xGa_(1-x)As中离子溅射行为有较大的差别,我们对此进行了初步讨论,并将实验结果与理论模型进行了比较,发现实验与理论之间不能很好一致。
Sputtering the semiconductor surface with low-energy ions causes changes in the surface structure and composition, resulting in poor electrical properties of the device. In this paper, the influence of bombardment ion energy and beam current density on the surface composition of GaAs and Al_xGa_ (1-x) As was investigated by Auger electron spectroscopy. Experimental results show that ion bombardment leads to a serious depletion of As on the surface of GaAs and a strong segregation of Al on the surface of Al_xGa_ (1-x) As and a slight decrease of Ga. My analysis of the surface composition of GaAs Al x Ga x (1-x) As after ion bombardment is different from the literature. The experimental results also show that the ion sputtering behaviors of GaAs and AlxGa_ (1-x) As are quite different from each other. We first discuss the results and compare the experimental results with the theoretical model. Can not be very consistent.