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一、引言分子束外延(MBE)是指在超高真空(UHV)环境中,将具有不同强度和化学特性的分子束射到加热的单晶衬底上,使其在衬底上进行反应,从而实现外延生长的一种精密加工技术。从晶体生长角度考虑,可称之为外延,而从工艺方式上考虑时,因为材料是以原子或分子状态蒸发到衬底上的,所以也可以称之为分子束蒸发。在外延家族中,与液相外延(LPE)和汽相外延(VPE)相比较,MBE还比较年轻,是六十年代末期才发展起来的一种新技术,尽管目前还不够成熟,但它正在不断发展和完善着。特别是最近几年来,随着激光器件和微波器件的发展,对外延层的要求越来越高,不但结构复杂,而且厚度也非常薄,MBE以其独特的优点受到应有的重视。以美国的贝尔
I. INTRODUCTION Molecular beam epitaxy (MBE) refers to the molecular beam with different intensities and chemical properties impinging on a heated single crystal substrate in an ultra-high vacuum (UHV) environment to react on a substrate, In order to achieve the epitaxial growth of a precision machining technology. From the crystal growth point of view, it can be called epitaxy, and from a technological point of view, because the material is in atomic or molecular state evaporation to the substrate, it can also be called molecular beam evaporation. In epitaxial families, MBE is still relatively young compared to liquid phase epitaxy (LPE) and vapor phase epitaxy (VPE) and was a new technology developed only in the late 1960s. Although it is not yet mature enough, it is undergoing Continuous development and improvement. Especially in recent years, with the development of laser devices and microwave devices, the requirements for the epitaxial layers are getting higher and higher, not only the structure is complicated, but also the thickness is very thin, MBE is deserved due attention for its unique advantages. To the United States Bell