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扩展稳定宽带隙半导体吸收带边是提高其光能利用率的有效方法之一。采用溶胶-凝胶法,在空气和N_2中分别制得SnO_2和SnO_2(N_2)光催化剂。X射线衍射和BET结果表明SnO_2和SnO_2(N_2)的晶型和比表面积基本相同。紫外-可见漫反射分析结果表明SnO_2和SnO_2(N_2)试样的吸收带边分别为352和388nm,SnO_2(N_2)试样的吸收带边有明显的红移,且光催化降解亚甲基蓝的活性较高。N_2条件下对SnO_2带隙进行调控,相比于普遍采用的H2,该方法更安全,这为后续宽带隙半导体表面氧空位浓度的调变提供了实验基础。
The expansion of a stable wide bandgap semiconductor absorption band edge is one of the effective ways to improve its light energy utilization. SnO_2 and SnO_2 (N_2) photocatalysts were prepared by sol-gel method in air and N_2. X-ray diffraction and BET results show that the crystal form and specific surface area of SnO 2 and SnO 2 (N 2) are basically the same. The results of UV-Vis diffuse reflectance showed that the absorption bands of SnO 2 and SnO 2 (N 2) samples were 352 and 388 nm, respectively. The absorption band edge of SnO 2 (N 2) sample showed obvious red shift and the photocatalytic degradation of methylene blue high. N_2 condition, the method is more secure than the commonly used H2, which provides an experimental basis for the modulation of oxygen vacancies on the surface of wide bandgap semiconductor.