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用改良的布里奇曼法制备以碲化铋(Bi_2Te_3)为基并掺入适量中性杂质元素的室温半导体温差电材料,晶体直径为φ19—25mm,其特性具有明显的取向性,平行于晶锭轴切取电偶臂时比垂直切取具有更好的性能。优值系数p型Z达3.2×10~(-3)K~(-1),n型Z达3.1×10~(-1)K~(-1)。文中还介绍了致冷器的工作原理、设计的基本依据和主要的计算公式,以及制作致冷器的主要工艺步骤。
Room temperature semiconductor thermoelectric materials based on bismuth telluride (Bi 2 Te 3) with appropriate amount of neutral impurity elements are prepared by the improved Bridgman method. The crystal diameter is φ19-25mm, and its characteristic has obvious orientation parallel to The ingot axis has better performance when slicing the galvanic arm than when slicing it vertically. The p - value Z of the coefficient of superiority is 3.2 × 10 ~ (-3) K ~ (-1) and the n - type Z is 3.1 × 10 ~ (-1) K ~ (-1). The article also introduces the working principle of the refrigerator, the basic design basis and the main calculation formula, as well as the main process of making the refrigerator.