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南京电子器件研究所最近研制成功 L波段2 5 0 W宽带硅微波脉冲功率晶体管。该器件在 1 .2～ 1 .4GHz频带内 ,脉宽 1 5 0 μs,占空比 1 0 %和 40V工作电压下 ,全带内脉冲输出功率在 2 4 0～ 30 0W之间 ,功率增益大于 7.8d B,效率大于 5 0 %。器件设计为梳条状结构 ,单元间距 6μ
Nanjing Institute of Electronics recently developed a L-band 25 W broadband silicon microwave pulse power transistor. The device in the 1.2 ~ 1.4GHz frequency band, the pulse width of 150 μs, duty cycle 10% and 40V operating voltage, the pulse output power within the entire band between 240 ~ 30 0W, the power gain Greater than 7.8d B, the efficiency is greater than 50%. The device is designed as a comb strip with a 6μ pitch