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本文利用离子注入方法,用不同剂量的氮离子对GaAs衬底进行注入实验。结果表明,氮注入明显地改善了Ti/n-GaAs肖特基势垒特性。
In this paper, ion implantation is used to implant GaAs substrates with different doses of nitrogen ions. The results show that the nitrogen injection significantly improves the Schottky barrier characteristic of Ti / n-GaAs.