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室温条件下于Ba(OH)_2溶液中采用无外加电流的非可逆原电池技术在钼金属基片上制备了BaMoO_4多晶薄膜.采用XRD、SEM和Raman技术表征了制备薄膜的微结构;同时探讨了BaMoO_4薄膜的电化学形成机制.XRD,SEM和Raman分析结果表明制备的薄膜表面均匀、致密,是白钨矿结构的四方单相BaMoO_4;非可逆原电池条件下BaMoO_4薄膜的形成包括阳极氧化溶解反应和溶液沉积反应,原电池反应的驱动力是电池的正极与负极的电势差.
The BaMoO_4 polycrystalline thin films were prepared on the molybdenum metal substrate using Ba (OH) _2 solution at room temperature in non-reversible galvanic cell without external current. The microstructures of the films were characterized by XRD, SEM and Raman techniques. The electrochemical formation mechanism of BaMoO_4 thin films was investigated by XRD, SEM and Raman analysis. The results show that the surface of BaMoO_4 thin film is uniform and compact, and is a tetragonal BaMoO_4 with scheelite structure. The formation of BaMoO_4 thin films under anodic conditions Reaction and solution deposition reaction, the driving force of the galvanic cell reaction is the potential difference between the positive electrode and the negative electrode of the battery.