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用1.5MeV He+离子注入半绝缘砷化镓晶体(SI-GaAs),以其为基体制成光电导天线。太赫兹时域光谱测量显示,以离子注入晶体为基体的光电导天线,其时域信号强度是未注入晶体的3倍,略强于以LT-GaAs晶体为基体的光电导天线,但拥有比LT-GaAs晶体为基体的光电导天线略宽的频谱宽度和相当的信噪比。实验结果表明,用1.5MeV He+室温注入SI-GaAs制备太赫兹光电导天线的最佳注量约为1×1016ions·cm-2。
Semi-insulating gallium arsenide crystals (SI-GaAs) were implanted with 1.5 MeV He + ions to form a photoconductive antenna. The terahertz time-domain spectroscopy measurements show that the photonic antenna based on ion-implanted crystal has a time-domain signal strength that is three times that of the un-implanted crystal, slightly stronger than the photoconductive antenna based on the LT-GaAs crystal, A slightly wider spectral width and a comparable signal-to-noise ratio of the LT-GaAs crystal-based photoconductive antenna. The experimental results show that the optimal injection amount of Si-GaAs for terahertz photoconductive antenna with 1.5MeV He + at room temperature is about 1 × 1016 ions · cm-2.