Impurity Deionization Effects on Surface Recombination DC Current-Voltage Characteristics in MOS Tra

• 作 者: 陈祖辉 揭斌斌 薩支唐
• 机 构: Lee-Kuan-Yew Postdoctoral Fellow,2007-2010,Nanyang Technological University,Department of Physics,Xi
• 出 处: 半导体学报
• 发表日期: 2010年12期
• 关键词: transistor impurity Shockley recombination drain deviation Fermi normalized negl

Impurity deionization on the direct-current current-voltage characteristics from electron-hole recombination (R-DCIV) at SiO_2/Si interface traps in MOS transistors is analyzed using the steady-state Shockley-Read-Hall recombination kinetics and the Fermi distributions for electrons and holes.Insignificant distortion is observed over 90% of the bell-shaped R-DCIV curves centered at their peaks when impurity deionization is excluded in the theory.This is due to negligible impurity deionization because of the much lower electron and hole concentrations at the interface than the impurity concentration in the 90%range.

Impurity deionization on the direct-current current-voltage characteristics from electron-hole recombination (R-DCIV) at SiO 2 / Si interface traps in MOS transistors is analyzed using the steady-state Shockley-Read-Hall recombination kinetics and the Fermi distributions for electronics and holes. Insignificant distortion was observed over 90% of the bell-shaped R-DCIV curves centered at their peaks when impurity deionization is excluded in the theory. This is due to negligible impurity deionization due to the much lower electron and hole concentrations at the interface than the impurity concentration in the 90% range.