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一、引言目前对光电探测器件的光谱响应范围,响应度、量子效率、噪声电流、暗电流等参数的测试中,都遇到如何正确测试其器件“短路”电流的问题。不论是PIN二极管,还是APD二极管,本质上是一个电流源。为使器件产生的信号电流与入射光通量之间保持良好线性关系,其器件必须在低的阻抗线路中工作,最好是采用Ⅰ—Ⅴ变换器的方法。本文仅以Si—RAPD的响应度、响应范围为
I. INTRODUCTION At present, in the testing of spectral response range, responsivity, quantum efficiency, noise current, dark current and other parameters of photoelectric detection devices, all have encountered the problem of how to correctly test the “short circuit” current of the device. Whether it is a PIN diode or an APD diode, it is essentially a current source. In order to maintain a good linear relationship between the signal current generated by the device and the incident flux, the device must operate in a low impedance line, preferably using the I-V converter. This article only Si-RAPD response, the response range is