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The formation of cavities in silicon carbide is vitally useful to "smart-cut" and metal gettering in semiconductor industry.In this study,cavities and extended defects formed in helium (He) ions implanted 6H-SiC at room temperature (RT) and 750 ℃ followed by annealing at 1500 ℃ are investigated by a combination of transmission electron microscopy and high-resolution electron microscopy.The observed cavities and extended defects are related to the implantation temperature.Heterogeneously distributed cavities and extended defects are observed in the helium-implanted 6H-SiC at RT,while homogeneously distributed cavities and extended defects are formed after He-implanted 6H-SiC at 750 ℃.The possible reasons are discussed.