【摘 要】
：
提出了一个包含改进的准弹道输运模型的砷化镓(GaAs)高电子迁移率晶体管(HEMT)的漏电流方程。弹道输运模型是基于玻耳兹曼输运方程和迁移率的扩展定义,即单位电场中载流子在
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提出了一个包含改进的准弹道输运模型的砷化镓(GaAs)高电子迁移率晶体管(HEMT)的漏电流方程。弹道输运模型是基于玻耳兹曼输运方程和迁移率的扩展定义,即单位电场中载流子在沟道中以弹道轨迹运动的平均速度。对平均速度的求解没有采用任何近似,并采用一种平滑的拟合方程将弹道迁移率和常规迁移率整合在一起。同时还研究了纳米尺度GaAs HEMT中温度、沟道长度和沟道掺杂浓度对有效迁移率的影响。最后,把有效迁移率模型和电流方程分别与实验数据和数值仿真结果进行比较,误差小于5%。
A leakage current equation of gallium arsenide (GaAs) high electron mobility transistor (HEMT) with improved quasi-ballistic transport model is proposed. The ballistic transport model is based on an expanded definition of the Boltzmann transport equation and mobility, which is the average velocity at which carriers carry trajectories in a channel in a unit electric field. No approximation to the average velocity was made, and a smooth fit equation was used to integrate the ballistic mobility with the conventional one. The effects of temperature, channel length and channel doping concentration on effective mobility in nanoscale GaAs HEMT were also studied. Finally, the effective mobility model and the current equation are respectively compared with the experimental data and the numerical simulation results, the error is less than 5%.
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