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为了获得高质量 4 H- Si C外延材料 ,研制出一套水平式低压热壁 CVD(L P- HWCVD)生长系统 ,在偏晶向的4 H- Si C Si(0 0 0 1)晶面衬底上 ,利用“台阶控制生长”技术进行了 4 H- Si C的同质外延生长 ,典型生长温度和压力分别为 15 0 0℃和 1.3× 10 3Pa,生长速率控制在 1.0 μm/h左右 .采用 Nom arski光学显微镜、扫描电镜 (SEM)、原子力显微镜 (AFM)、X射线衍射、Raman散射以及低温光致发光测试技术 ,研究了 4 H- Si C的表面形貌、结构和光学特性以及用 NH3作为 n型掺杂剂的 4 H- Si C原位掺杂技术 ,并在此基础上获得了 4 H- Si C p- n结二极管以及它们在室温及 4 0 0℃下的电致发光特性 ,实验结果表明 4 H- Si C在 Si不能工作的高温环境下具有极大的应用潜力 .
In order to obtain high-quality 4 H-Si C epitaxial materials, a horizontal low pressure hot wall CVD (L-HWCVD) growth system was developed. In the orthorhombic 4 H-Si C Si (0 0 0 1) Substrate, the homoepitaxial growth of 4 H-Si C was carried out by the “step controlled growth” technique. The typical growth temperature and pressure were 15 0 0 ℃ and 1.3 × 10 3 Pa, respectively, and the growth rate was controlled at about 1.0 μm / h The surface morphology, structure and optical properties of 4 H-Si C were investigated by Nom arski optical microscope, scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction, Raman scattering and low temperature photoluminescence 4 H-Si C in-situ doping with NH 3 as an n-type dopant, and on the basis of which 4 H-Si C p-n junction diodes and their electrolysis at room temperature and 400 ° C. were obtained The experimental results show that 4 H-Si C has great potential in high-temperature environments where Si can not work.