论文部分内容阅读
用MOCVD生长未掺杂n-Al0.3Ga0.7N制备了MSM结构紫外探测器,并通过电击穿MSM右边肖特基势垒而制成了横向肖特基二极管。器件在零偏电压处的背景光电流为87.3pA。从器件的室温I-V特性曲线计算出理想因子n、零偏势垒高度B0和串联电阻RS分别为1.99、0.788 eV和10.2 kΩ。器件在305 nm波长处有陡峭的截止边,300 nm峰值波长处电流响应率为0.034 A/W。
MSM structure UV detectors were grown by MOCVD without undoped n-Al0.3Ga0.7N, and lateral Schottky diodes were fabricated by electrically striking the right Schottky barrier of MSM. The device has a background current of 87.3pA at zero offset voltage. The ideality factor n is calculated from the room temperature I-V characteristic of the device. The zero-bias barrier height B0 and the series resistance RS are 1.99, 0.788 eV and 10.2 kΩ, respectively. The device has a steep cutoff at 305 nm and a current response of 0.034 A / W at a peak wavelength of 300 nm.