论文部分内容阅读
弱束技术和高阶明场技术是电子显微学中两种重要的高分辨成象技术(分辨率可达20A),它是研究缺陷(位错、位错环、层错、空位团等)的精细结构和微小沉淀物的有力工具。本文简要地叙述了这两种成象技术的原理和有关的电子衍射动力学分析。讨论了成象条件的各种参量和实验方法,介绍了这两种技术在氢区熔单晶硅和形变铝中的应用,最后还比较了这两种成象技术的特点及其适用条件。
Weak beam technique and high order bright field technique are two important high-resolution imaging techniques in electron microscopy (with a resolution of up to 20A), which is to study defects (dislocations, dislocation loops, stacking faults, vacancy clusters, etc.) Fine structure and tiny deposits of powerful tools. This paper briefly describes the principles of these two imaging techniques and the related electron diffraction kinetic analysis. The various parameters and experimental methods of imaging conditions were discussed. The application of these two technologies in the molten silicon and deformed aluminum in the hydrogen region was introduced. Finally, the characteristics of the two imaging technologies and the applicable conditions were also compared.