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Si SiO2 薄膜采用射频磁控溅射技术制备 ,当正向偏压大于 5V时即可观测到来自不同Si层厚度的Au (Si SiO2 ) p Si结构在室温下的可见电致发光 ,其发光谱峰位均位于 6 6 0nm处 ,测得的各种偏压下的发光峰位不随正向偏压的升高而移动。实验结果表明光发射主要来自于SiO2 层中的发光中心上的复合发光。
Si SiO2 films were prepared by RF magnetron sputtering. When the forward bias voltage is greater than 5V, the visible electroluminescence of Au (Si SiO2) p Si structures from different Si layer thicknesses at room temperature can be observed. The peak positions are all located at 6 6 0 nm, and the measured peak positions under various bias voltages do not move with the increase of the forward bias voltage. The experimental results show that the light emission mainly comes from the composite luminescence at the luminescent center in the SiO2 layer.