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利用射频磁控溅射法在n型单晶硅衬底上制备了ZnO薄膜 .通过改变源气体中氩气和氧气的流量比制备了具有不同化学计量比的ZnO薄膜 ,并且将它们在真空中作了加热后处理来研究ZnO薄膜的光致发光特性 .这些在常温衬底上沉积的薄膜可发出强的蓝光 ,其峰位会随氧流量的减少而发生红移 .从导带底到锌缺陷形成的受主能级之间的跃迁可能是产生蓝光发射的原因
ZnO thin films were fabricated on n-type single crystal silicon substrates by RF magnetron sputtering.The ZnO thin films with different stoichiometric ratios were prepared by changing the flow ratio of argon to oxygen in the source gas, After heating treatment to study the photoluminescence characteristics of ZnO thin films deposited on the substrate at room temperature can emit strong blue light, the peak position will red-shift with the decrease of oxygen flow from the end of the conduction band to the zinc The transition between the acceptor levels of defect formation may be responsible for the blue emission