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本文研究了用溅射的 SiO_2膜作为锌扩散掩模制作的 GaInAsP/InP 双异质结平面条形激光器的激射特性对条宽的依赖关系。条宽10、15、20μm的激光器以基模模式工作,每面微分量子效率大于20%,而条宽5μm 的激光器即使正好在阈值以上也以多横模工作。而且条宽5μm 激光器的阈值电流大大增加,与条宽较大的条形激光器相比,其激射波长向更短的波长漂移。条宽15μm 的激光器显示出良好的模式特性,直到输出功率为每面22mW 时仍都以基横模工作,而且在较宽的电流范围内以单纵模工作。本文讨论了这种激射特性对条宽依赖关系的形成原因,并且假设用溅射的 SiO_2作掩模进行条区锌扩散是造成这种依赖关系的主要原因。
In this paper, we study the dependence of stripe width on the lasing characteristics of GaInAsP / InP double heterojunction planar strip lasers fabricated using sputtered SiO_2 film as a zinc diffusion mask. The 10,15 and 20-μm-wide lasers operate in a fundamental mode with a differential quantum efficiency of more than 20% on each side and a laser with a 5-μm-wide width operates in multi-transverse mode even just above the threshold. Moreover, the threshold current of a 5μm wide-width laser greatly increases, and its lasing wavelength shifts to a shorter wavelength than a bar-shaped laser with a larger bar width. The lasers with a width of 15 μm exhibit good mode characteristics and still operate in a fundamental transverse mode up to an output power of 22 mW per side and in a single longitudinal mode over a wide current range. This article discusses the reason for the dependence of this lasing property on the dependence of the stripe width and assumes that the diffusion of zinc in the stripe region using sputtered SiO 2 as a mask is the main reason for this dependence.