,The influence of SiNx substrate on crystallinity of μc-Si film used in thin film transistors

• 作 者: Li Juan Wu Chun-Ya Liu Jian-Ping Zhao Shu-Yun Meng Zhi-Guo Xiong Shao-Zhen Zhang Li-Zhu
• 机 构: Institute of Photo-electronics, Nankai University, Tianjin 300071, China“,”The Tianjin Key Laborator
• 出 处: 中国物理（英文版）
• 发表日期: 2006年6期
• 关键词: μc-Si:H thin film SiNx substrate crystallinity bottom-gate TFT

This paper found that the crystalline volume ratio (Xc) ofμc-Si deposited on SiNx substrate is higher than that on 7059 glass. At the same silane concentration (SC) (for example, at SC=2%), the Xc of μc-Si deposited on SiNx is more the crystalline growth ofμc-Si thin film, which has been confirmed by atomic force microscope (AFM) observation.Comparing several thin film transistor (TFT) samples whose active-layer were deposited under various SC, this paper found that the appropriate SC for the μc-Si thin film used in TFT as active layer should be more than 2%, and Xcshould be around 50%. Additionally, the stability comparison of μc-Si TFT and a-Si TFT is shown in this paper.