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使用扫描电子显微镜、电子能谱仪、X射线衍射等研究了在N2气氛中1150℃×10 h等温热处理的Si3N4/Ni,Si3N4/Ni3Al平面偶界面固相反应区的形貌、成分分布、显微结构及相组成。结果表明:Si3N4/Ni界面固相反应形成约20μm厚的反应区,反应区主要由Ni3Si构成,其中分布着大量细密的孔洞;而Si3N4/Ni3Al界面固相反应形成约2μm厚的反应区,反应区具有比Ni3Al高得多的Al含量,反应区由NiAl及Ni3Si构成。Si3N4/Ni3Al具有比Si3N4/Ni高得多的界面化学相容性。
The morphologies and compositional distribution of the solid reaction sites of Si3N4 / Ni, Si3N4 / Ni3Al plane interface at 1100 ℃ × 10 h isothermal treatment in N2 atmosphere were investigated by using scanning electron microscopy, electron spectroscopy and X-ray diffraction. , Microstructure and phase composition. The results show that the solid-state reaction at Si3N4 / Ni interface forms a reaction zone about 20μm thick, the reaction zone is mainly composed of Ni3Si, a large number of fine pores are distributed in the reaction zone and the solid reaction of Si3N4 / Ni3Al interface is about 2μm thick. The zone has a much higher Al content than Ni3Al and the reaction zone consists of NiAl and Ni3Si. Si3N4 / Ni3Al has a much higher interface chemical compatibility than Si3N4 / Ni.