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提出了结场效应晶体管工作机构的二维分析方法。特别着重于宽栅和窄栅结构内电流饱和的过程。它表明,在源-漏沟道内的饱和载流子传输速度是产生至今未报导过的器件工作的机构。从二维分析和一维分析理论所推出的结论进行对比,并以图示表示。
A two-dimensional analysis method of working mechanism of junction field effect transistor is proposed. Particular emphasis is placed on the process of saturating the current in wide and narrow gate structures. It shows that the saturation carrier transport speed in the source-drain channel is the mechanism that produces devices that have hitherto not been reported. The conclusions drawn from two-dimensional analysis and one-dimensional analysis theory are compared and illustrated.