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采用磁控溅射技术先在硅衬底上制备Ga2O3/Mg薄膜,然后在1000℃时于流动的氨气中进行氨化反应制备GaN薄膜。X射线衍射(XRD)、X射线光电子能谱(XPS)、选区电子衍射(SAED)和高分辨透射电子显微镜(HRTEM)的结果表明采用此方法得到了六方纤锌矿结构的GaN单晶纳米棒。通过扫描电镜(SEM)观察发现纳米棒的形貌,纳米棒的直径在200~600nm之间。我们对镁层的作用进行了简单探讨。
A Ga2O3 / Mg thin film was prepared on a silicon substrate by magnetron sputtering firstly, and then a GaN film was prepared by amination reaction in a flowing ammonia gas at 1000 ° C. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), selected area electron diffraction (SAED) and high resolution transmission electron microscopy (HRTEM) results show that the hexagonal wurtzite GaN single crystal nanorods . The morphology of the nanorods was observed by scanning electron microscopy (SEM). The diameter of the nanorods was between 200 and 600 nm. We have a brief discussion of the role of magnesium layers.