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设计了一种双粒度CdSe/ZnS掺杂量子点薄膜的反射式荧光温度传感器。以发射波长分别为540nm和610nm的CdSe/ZnS掺杂量子点薄膜作为核心器件,研究了其光致发光光谱的峰值波长、量子点带隙、峰值强度和自参考光谱强度等参量随温度的变化特性。结果表明,在30~100℃的测量范围内,掺杂量子点薄膜的光致发光光谱峰值强度随着温度的增加而逐渐减小;峰值波长、量子点带隙和自参考光谱强度与温度均呈线性关系;峰值强度与温度呈指数规律关系;证明了自参考光谱强度在升温与降温的过程中具有较好的稳定性;峰值波长随温度升高出现红移,平均灵敏度可达到0.055nm/℃。
A dual-particle reflective CdSe / ZnS doped quantum dot reflective fluorescence temperature sensor was designed. The CdSe / ZnS doped quantum dot films with wavelength of 540nm and 610nm were respectively used as the core devices. The changes of the peak wavelength, the quantum dot bandgap, the peak intensity and the self-reference spectral intensity of the photoluminescence spectra with temperature were studied. characteristic. The results show that the peak intensity of photoluminescence spectra of doped quantum dot films decreases with the increase of temperature in the range of 30 ~ 100 ℃. The peak wavelength, the quantum dot band gap and the intensity and temperature of the reference spectra The peak intensity and the temperature showed an exponential relationship; it was proved that the self-reference spectral intensity had good stability in the process of heating and cooling; the peak wavelength with red-shifted with increasing temperature, the average sensitivity can reach 0.055nm / ℃.