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建立了Ａｌ０．３Ｇａ０．２２Ｉｎ０．４８Ｐ／ＧａＡｓ 异质结双极型晶极管（ＨＢＴ）中电流输运过程的模型，利用实验得到的材料特性参数进行了ＨＢＴ电流增益随温度变化的模拟．随着温度上升，小电流时电流增益下降较多，而大电流时电流增益基本保持不变．模拟表明，小电流下电流增益的下降主要是由ｅｂ 结空间电荷区的复合电流随温度增加而造成的；而大电流下电流增益直至７２３Ｋ 下降仍小于１０％ ．最高工作温度可达８４８Ｋ．由于采用的计算方法充分考虑了空间电荷区复合电流的影响，模拟结果较为符合实际情况，可为研制高性能ＨＢＴ器件所需材料提供参考依据．
The model of current transport in Al0.3Ga0.22In0.48P / GaAs heterojunction bipolar transistor (HBT) was established. The simulation of HBT current gain with temperature was carried out based on the experimental material properties. As the temperature rises, the current gain decreases at a small current, while the current gain remains largely unchanged at a large current. The simulation shows that the decrease of the current gain at small current is mainly caused by the increase of the composite current in the space charge region of the eb junction with the increase of temperature. However, the current gain of the large current is still less than 10% until the decrease of 723K. The maximum working temperature up to 848K. Due to the calculation method adopted, the influence of complex current in space charge zone is fully taken into account. The simulation results are more in line with the actual situation and provide a reference for the development of materials needed for high performance HBT devices.