Defect reduction in GaAs/Si film with InAs quantum-dot dislocation filter grown by metalorganic chem

• 作 者: 王俊 胡海洋 邓灿 贺云瑞 王琦 段晓峰 黄永清 任晓敏
• 机 构: Institute of Information Photonics and Optical Communications,Beijing University of Posts and Teleco
• 出 处: Chinese Physics B
• 发表日期: 2015年02期
• 关键词: dislocation MOCVD insertion crystalline annealing serving sapphire optoelectroni

The growth of GaAs epilayers on silicon substrates with multiple layers of InAs quantum dots(QDs) as dislocation filters by metalorganic chemical vapor deposition(MOCVD) is investigated in detail.The growth conditions of single and multiple layers of QDs used as dislocation filters in GaAs/Si epilayers are optimized.It is found that the insertion of a five-layer InAs QDs into the GaAs buffer layer effectively reduces the dislocation density of GaAs/Si film.Compared with the dislocation density of 5×10~7 cm~(-2) in the GaAs/Si sample without QDs,a density of 2×10~6 cm~(-2) is achieved in the sample with QD dislocation filters.

The growth of GaAs epilayers on silicon substrates with multiple layers of InAs quantum dots (QDs) as dislocation filters by metalorganic chemical vapor deposition (MOCVD) is investigated in detail. The growth conditions of single and multiple layers of QDs used as dislocation filters in GaAs / Si epilayers are optimized. It is found that the insertion of a five-layer InAs QDs into the GaAs buffer layer can effectively reduce the dislocation density of GaAs / Si film. Compared with the dislocation density of 5 × 10 ~ 7 cm ~ (- 2) in the GaAs / Si sample without QDs, a density of 2 × 10 ~ 6 cm -2 was achieved in the sample with QD dislocation filters.