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A novel GaN-based vertical heterostructure field effect transistor (HFET) with nonuniform doping superjunctions (non-SJ HFET) is proposed and studied by Silvaco-ATLAS, for minimizing the specific on-resistance (RonA) at no expense of breakdown voltage (BV ). The feature of non-SJ HFET lies in the nonuniform doping concentration from top to bottom in the n-and p-pillars, which is different from that of the conventional GaN-based vertical HFET with uniform doping su-perjunctions (un-SJ HFET). A physically intrinsic mechanism for the nonuniform doping superjunction (non-SJ) to further reduce RonA at no expense of BV is investigated and revealed in detail. The design, related to the structure parameters of non-SJ, is optimized to minimize the RonA on the basis of the same BV as that of un-SJ HFET. Optimized simulation results show that the reduction in RonA depends on the doping concentrations and thickness values of the light and heavy doping parts in non-SJ. The maximum reduction of more than 51％in RonA could be achieved with a BV of 1890 V. These results could demonstrate the superiority of non-SJ HFET in minimizing RonA and provide a useful reference for further developing the GaN-based vertical HFETs.